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Bulletin I25175 rev. C 12/96
ST223S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
220A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST223S
220 85 345 5850 6120 171 156 400 to 800 10 to 20 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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1
ST223S Series
Bulletin I25175 rev. C 12/96
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST223S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 630 630 580 420 50 VDRM 50 60
ITM 180 el
o
ITM 100s 690 710 680 630 50 VDRM 85 6450 3140 1860 980 50 V DRM 60
ITM
Units
430 420 370 250 50 50 85
970 1010 1000 860 50 60
4850 2280 1310 790 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST223S
220 85 345 5850 6120 4920 5150
Units
A C
Conditions
180 conduction, half sine wave DC @ 76C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
171 156 121 111 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1710
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST223S Series
Bulletin I25175 rev. C 12/96
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
ST223S
1.58 1.05 1.09 0.88
Units
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
m 0.82 600 1000 mA
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST223S
1000 0.78 Min 10 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST223S
500 40
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% V DRM, higher value available on request TJ = TJ max., rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST223S
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST223S Series
Bulletin I25175 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST223S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
22
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 20 10 CN 12 CM 15 CL t q(s) 18 CP 20 CK 25 -30 -50 DN DM DL DP DK --100 EN EM EL EP EK --200 FN * FM FL * FP FK --400 --HL HP HK HJ HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
4
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ST223S Series
Bulletin I25175 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA.
(0 .3 9 .5 MI N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD C.S. 25mm 2
(0
. 86
)M
IN .
Fast-on Terminals
AMP. 280000-1 REF-250
+I 210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A * 35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST223S Series
Bulletin I25175 rev. C 12/96
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 ST223S Series R thJC (DC) = 0.105 K/W 120
130 120 110
ST223S Series R thJ C (DC) = 0.105 K/W
110
Conduction Period
Conduction Angle
100 90 30 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
30
60 90 120 180
90
60 90 120 180 DC
80 0 40 80 120 160 200 240 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-st ate Power Loss (W)
350 300
250 200 150 100
Conduction Angle
180 120 90 60 30 RMS Limit
A hS Rt
0. 2K
K/ W 0.4 K/ W 0 .5 K /W
0 .8 K/W
0.3
50 0 0 50 100
ST223S Series TJ = 125C 150 200
1. 2 K /W
250 25
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
16 0.
/W
1 0. W K/
W K/
=0 .0 8 W K/ e lt -D a R
50
75
100
125
Maximum Average On-state Power Loss (W)
500 450
400
350 300
DC 180 120 90 60 30
R
250
200 150
RMS Limit
Conduction Period
0. = 1K 0. 08 /W K/ 0 .1 W 6K -D /W el ta 0.2 R K/ W 0 .3 K /W 0. 4 K/W
100
50 0
0 .5 K /W 0 .8 K/W
1.2 K/W
SA th
ST223S Series TJ = 125C 0 50 100 150 200 250 300
350 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST223S Series
Bulletin I25175 rev. C 12/96
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
5500 5000 4500 4000 3500 3000 2500 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
6000 5500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 5000 No Voltage Reapplied Rated VRRMReapplied 4500 4000 3500 3000 2500 2000 0.01 ST223S Series
ST223S Series
10
100
0.1 Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
Fig. 6 - Maximum Non-repetitive Surge Current
1 Steady State Value R thJC = 0.105 K/W (DC Operation) 0.1
10000 Instantaneous On-state Current (A)
1000 TJ = 25C TJ = 125C ST223S Series 100 0 1 2 3 4 5 6 7 8 9 10 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.01 ST223S Series
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
ITM = 500 A
Maximum Reverse Recovery Current - Irr (A)
250 ST223S Series TJ = 125 C
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
I TM = 500 A 300 A 200 A 100 A 50 A
200
300 A 200 A 100 A
150
100
50 A
50
ST223S Series TJ = 125 C
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
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ST223S Series
Bulletin I25175 rev. C 12/96
1E4
Peak On-state Current (A)
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% V DRM 1000 500 1500 400 200 100 50 Hz
1000 1500 2500 3000 500
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
1E3
2500 3000 5000 10000 ST223S Series Sinusoidal pulse TC = 60C
400 200
100
50 Hz
5000 tp 10000
tp
ST223S Series Sinusoidal pulse T C = 85C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
3000 5000
1500 2500
1000 400
200 100 50 Hz
1000 1500 2500 400
200
100
50 Hz
ST223S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
3000 5000
1E2 1E1
ST223S Series Trapezoidal pulse TC = 85C di/dt = 50A/s
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM ST223S Series Trapezoidal pulse TC = 85C di/dt = 100A/s
Peak On-state Current (A)
tp
1E3
1500 2500 3000 5000
1000
500
100 50 Hz 400 200
500 1000 1500 400
50 Hz 200 100
tp
ST223S Series Trapezoidal pulse TC = 60C di/dt = 100A/s
2500 3000 5000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST223S Series
Bulletin I25175 rev. C 12/96
1E5
ST223S Series Rectangular pulse di/dt = 50A/s 20 jo ules per pulse 3 5 10
Peak On-state Current (A)
tp
1E4
1 2 4 7.5
20 joules per pulse
1E3
0.1
0.3 0.2
0.5
1 0.3 0.2 0.1 0.5
2
1E2
tp
ST223S Series Sinusoidal pulse
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST223S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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